Dual width finfet

ABSTRACT

A dual width SOI FinFET is disclosed in which different portions of a strained fin have different widths. A method of fabrication of such a dual width FinFET entails laterally recessing the strained fin in the source and drain regions using a wet chemical etching process so as to maintain a high degree of strain in the fin while trimming the widths of fin portions in the source and drain regions to less than 5 nm. The resulting FinFET features a wide portion of the fin in the channel region underneath the gate, and a narrower portion of the fin in the source and drain regions. An advantage of the narrower fin is that it can be more easily doped during the growth of the epitaxial raised source and drain regions.

BACKGROUND

1. Technical Field

The present disclosure generally relates to advanced transistorstructures for use in integrated circuits.

2. Description of the Related Art

Advanced integrated circuits typically feature strained channel devices,silicon-on-insulator substrates, FinFET structures, or combinationsthereof, in order to continue scaling transistor gate lengths below 20nm. Such technologies allow the channel length of the transistor toshrink while minimizing detrimental consequences such as current leakageand other short channel effects.

A FinFET is an electronic switching device that features a conductingchannel in the form of a semiconducting fin that extends outward fromthe substrate surface. In such a device, the gate, which controlscurrent flow in the fin, wraps around three sides of the fin so as toinfluence current flow from three surfaces instead of one. The improvedcontrol achieved with a FinFET design results in faster switchingperformance in the “on” state and less current leakage in the “off”state than is possible in a conventional planar device.

Incorporating strain into the channel of a semiconductor devicestretches the crystal lattice, thereby increasing charge carriermobility in the channel so that the device becomes a more responsiveswitch. Introducing compressive strain into a PFET transistor tends toincrease hole mobility in the channel, resulting in a faster switchingresponse to changes in voltage applied to the transistor gate. Likewise,introducing a tensile strain into an NFET transistor tends to increaseelectron mobility in the channel, also resulting in a faster switchingresponse.

There are many ways to introduce strain into the channel region of aFinFET. Techniques for introducing strain typically entail incorporatinginto the device epitaxial layers of one or more materials having crystallattice dimensions or geometries that differ slightly from those of thesilicon substrate. The epitaxial layers can be made of doped silicon orsilicon germanium (SiGe), for example. Such epitaxial layers can beincorporated into source and drain regions, or into the transistor gatethat is used to modulate current flow in the channel, or into thechannel itself, which is the fin. Alternatively, strain can be inducedin the fin from below the device by using various types ofsilicon-on-insulator (SOI) substrates. An SOI substrate features aburied insulator, typically a buried oxide layer (BOX) underneath theactive area. SOI FinFET devices have been disclosed in patentapplications assigned to the present assignee, for example, U.S. patentapplication Ser. No. 14/231,466, entitled “SOI FinFET Transistor withStrained Channel,” U.S. patent application Ser. No. 14/588,116, entitled“Silicon Germanium-on-insulator FinFET,” and U.S. patent applicationSer. No. 14/588,221, entitled “Defect-Free Strain-Relaxed Buffer Layer,”all of which are hereby incorporated by reference in their entireties.

BRIEF SUMMARY

A dual width SOI FinFET having a strained channel and raised source anddrain regions is disclosed, along with a method of fabrication. Infabricating strained FinFET devices, especially those having shortchannels less than about 20 nm in length, one challenge that arises isforming a very narrow semiconducting fin without inadvertently relievingstrain in the fin material. Subjecting the fin to a subtractive processsuch as reactive ion etching (RIE) removes material by a combination ofmechanical and chemical mechanisms wherein the mechanical aspect impartsdestructive kinetic energy to the crystal lattice of the fin. Thepresent inventors have observed that such a process tends to relaxstrain in the crystal lattice, whereas wet etching is a purely chemicalprocess that alters the lattice more gently, thus having the potentialto maintain strain. However, wet etching has the constraint that it isan isotropic process lacking in directional control.

A fabrication method is disclosed in which lateral recess of a strainedfin in the source and drain regions is accomplished using a wet chemicaletching process so as to maintain a high degree of strain in the finwhile trimming the fin width in the source and drain regions to lessthan 5 nm. The resulting FinFET features a wider fin underneath thegate, and a narrower fin in the source and drain regions. An advantageof the narrower fin is that it can be more easily doped during thegrowth of the epitaxial raised source and drain regions.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

In the drawings, identical reference numbers identify similar elementsor acts. The sizes and relative positions of elements in the drawingsare not necessarily drawn to scale.

FIG. 1 is a flow diagram showing steps in a method of fabricating a dualwidth FinFET as illustrated in FIGS. 2A-6D, according to one embodimentas described herein.

FIGS. 2A, 3A, 4A, 5A, 6A are top plan views of the dual width FinFET atsuccessive steps during fabrication using the method shown in FIG. 1,wherein sidewall spacers are omitted for clarity.

FIGS. 2B, 3B, 4B, 5B, 6B are cross-sectional views, along a cut linethrough the source/drain regions of the dual width FinFET at successivesteps during fabrication using the method shown in FIG. 1.

FIGS. 3C, 4C, 5C, 6C are cross-sectional views, along a cut line througha fin and across the gate of the dual width FinFET at successive stepsduring fabrication using the method shown in FIG. 1.

FIGS. 3D, 4D, 5D, 6D are cross-sectional views, along a cut line throughthe gate and across a fin of the dual width FinFET at successive stepsduring fabrication using the method shown in FIG. 1.

DETAILED DESCRIPTION

In the following description, certain specific details are set forth inorder to provide a thorough understanding of various aspects of thedisclosed subject matter. However, the disclosed subject matter may bepracticed without these specific details. In some instances, well-knownstructures and methods of semiconductor processing comprisingembodiments of the subject matter disclosed herein have not beendescribed in detail to avoid obscuring the descriptions of other aspectsof the present disclosure.

Unless the context requires otherwise, throughout the specification andclaims that follow, the word “comprise” and variations thereof, such as“comprises” and “comprising” are to be construed in an open, inclusivesense, that is, as “including, but not limited to.”

Reference throughout the specification to “one embodiment” or “anembodiment” means that a particular feature, structure, orcharacteristic described in connection with the embodiment is includedin at least one embodiment. Thus, the appearance of the phrases “in oneembodiment” or “in an embodiment” in various places throughout thespecification are not necessarily all referring to the same aspect.Furthermore, the particular features, structures, or characteristics maybe combined in any suitable manner in one or more aspects of the presentdisclosure.

Reference throughout the specification to integrated circuits isgenerally intended to include integrated circuit components built onsemiconducting substrates, whether or not the components are coupledtogether into a circuit or able to be interconnected. Throughout thespecification, the term “layer” is used in its broadest sense to includea thin film, a cap, or the like and one layer may be composed ofmultiple sub-layers.

Reference throughout the specification to conventional thin filmdeposition techniques for depositing silicon nitride, silicon dioxide,metals, or similar materials include such processes as chemical vapordeposition (CVD), low-pressure chemical vapor deposition (LPCVD), metalorganic chemical vapor deposition (MOCVD), plasma-enhanced chemicalvapor deposition (PECVD), plasma vapor deposition (PVD), atomic layerdeposition (ALD), molecular beam epitaxy (MBE), electroplating,electro-less plating, and the like. Specific embodiments are describedherein with reference to examples of such processes. However, thepresent disclosure and the reference to certain deposition techniquesshould not be limited to those described. For example, in somecircumstances, a description that references CVD may alternatively bedone using PVD, or a description that specifies electroplating mayalternatively be accomplished using electro-less plating. Furthermore,reference to conventional techniques of thin film formation may includegrowing a film in-situ. For example, in some embodiments, controlledgrowth of an oxide to a desired thickness can be achieved by exposing asilicon surface to oxygen gas or to moisture in a heated chamber.

Reference throughout the specification to conventional photolithographytechniques, known in the art of semiconductor fabrication for patterningvarious thin films, includes a spin-expose-develop process sequencetypically followed by an etch process. Alternatively or additionally,photoresist can also be used to pattern a hard mask (e.g., a siliconnitride hard mask), which, in turn, can be used to pattern an underlyingfilm.

Reference throughout the specification to conventional etchingtechniques known in the art of semiconductor fabrication for selectiveremoval of polysilicon, silicon nitride, silicon dioxide, metals,photoresist, polyimide, or similar materials includes such processes aswet chemical etching, reactive ion (plasma) etching (RIE), washing, wetcleaning, pre-cleaning, spray cleaning, chemical-mechanicalplanarization (CMP) and the like. Specific embodiments are describedherein with reference to examples of such processes. However, thepresent disclosure and the reference to certain deposition techniquesshould not be limited to those described. In some instances, two suchtechniques may be interchangeable. For example, stripping photoresistmay entail immersing a sample in a wet chemical bath or, alternatively,spraying wet chemicals directly onto the sample.

Specific embodiments are described herein with reference to dual widthFinFETs that have been produced; however, the present disclosure and thereference to certain materials, dimensions, and the details and orderingof processing steps are exemplary and should not be limited to thoseshown.

Turning now to the figures, FIG. 1 shows steps in a method offabricating a dual width FinFET for high performance integratedcircuits, according to one embodiment. Steps in the method 100 forconstructing the dual width FinFET on a silicon-on-insulator (SOI)substrate are further illustrated by FIGS. 2A-6D, and described below.In each of the Figures, A is a top plan view of the device at thepresent step during fabrication, showing cut lines for the other views.B is a cross-sectional view along a cut line through the gate; C is across-sectional view along a cut line across the gate, aligned with afin; and D is a cross-sectional view along a cut line across the fins inthe source/drain region.

At 102, according to one embodiment, strained fins 122 are formed on anSOI wafer, the strained fins 122 having a substantially uniform finwidth 126. The SOI wafer includes a silicon substrate, a buried oxide(BOX) layer 118, and a top silicon layer 120 having a thickness in therange of about 35-50 nm. It is noted that the silicon substrate isomitted from the Figures, for simplicity. Alternatively, a strained SOI(sSOI) wafer can be used, which is supplied with strain already impartedto the top silicon layer 120. SOI wafers and sSOI wafers are standardstarting materials that are commonly used in the semiconductor industry.Alternatively, a bulk silicon wafer can be used as the starting materialwherein both the BOX layer 118 and the strained top silicon layer 120can be formed as initial steps of the present fabrication process. Ifstrained silicon germanium (SiGe) fins are desired, e.g., for PFETdevices, germanium atoms can be incorporated into the top silicon layer120 using methods known in the art to form a tensile-strained SiGe film.A strain relaxed buffer (SRB) layer, known in the art, optionally may beincluded in the substrate to stabilize a top silicon layer 120 having ahigh germanium concentration. Alternatively, carbon atoms can beincorporated into the top silicon layer 120 to create strained siliconcarbide (SiC) fins.

The top silicon layer 120 can be patterned to form the fins 122 shown inFIGS. 2A, 2B using a conventional extreme ultraviolet (EUV) directlithography process for wider fins, or, for example, a self-alignedsidewall image transfer (SIT) process for narrower fins. In theembodiment described herein, the fin width 126 is narrow, desirably inthe range of about 6-12 nm, which can be achieved using the SITtechnique. The SIT technique is well known in the art and therefore isnot explained herein in detail. The SIT process is capable of definingvery high aspect ratio fins 122 using SiN sidewall spacers as a fin hardmask. According to the SIT technique, a mandrel, or temporary structure,is formed first, on top of the top silicon layer 120. Then a siliconnitride film is deposited conformally over the mandrel and planarized toform sidewall spacers on the sides of the mandrel. Then the mandrel isremoved, leaving behind a pair of narrow sidewall spacers that serve asa hard mask for defining the fins 122. Once the hard mask is patterned,the fins 122 are etched into the top silicon layer 120, down to the BOX118. The fins 122 thus formed will serve as channel regions of theFinFET.

After the fins 122 are formed, a thick gate oxide 124 is grown from thesilicon surfaces as shown in FIG. 2B. The fins 122 are then patterned toremove the gate oxide 124 from portions of the fins that will be in thesource and drain regions of the FinFET, while being retained in the gateregion.

At 104, a gate structure 128 is formed that wraps around three sides ofeach fin 122 as shown in FIGS. 3A-3D. The gate structure 128 thusdelineates three portions of each fin 122. The first, central portionunderneath the gate structures is the channel regions of the FinFET. Asecond portion extends out from the gate structure 128 into a sourceregion of the FinFET. A third portion of the fin extends out from thegate structure 128 into a drain region of the FinFET.

Processing steps used to form such a gate structure are well known inthe art, and therefore need not be described herein in detail. In oneembodiment, the gate structure 128 includes a polysilicon gate 130, asilicon nitride (SiN) cap 132, and sidewall spacers 134 made of SiN or alow-k material such as silicon-boron-carbon nitride (SiBCN). It is notedthat the gate structure does not appear in FIG. 3B because the cut lineintersects the fin outside the gate region.

At 106, silicon dioxide (SiO₂) film 140 is directionally deposited ontop of the fins 122 and on top of the SiN cap 132, as shown in FIGS.4A-4D. Directional deposition can be performed using, for example, a gascluster ion beam (GCIB) process. The GCIB process is known in the artand has been described in U.S. Patent Publication No. 2014/0239401 foruse in angled implantation. A directional deposition process thatemploys a GCIB can be obtained as a proprietary process provided withthin film deposition equipment supplied by Applied Materials, Inc., forexample. The directional deposition process deposits the oxide film 140preferentially on horizontal surfaces, with minimal deposition on thesidewalls of the fins 122 or the sidewall spacers 134. In oneembodiment, the oxide film 140 has a thickness in the range of about10-15 nm. Following the directional deposition step, a shorthydrofluoric (HF) acid dip can be performed to touch up the sidewalls,without removing a significant portion of the oxide film 140 from thehorizontal surfaces.

At 108, the fins 122 are trimmed to reduce the fin width 126 of thesecond and third portions of the fins, outside the gate region, to anarrower fin width 142, as shown in FIGS. 5A-5D. Meanwhile, the channelregions of the fins underneath the gate structure 128 retain theiroriginal fin width 126, thus creating dual width fins. The first andsecond fin widths, 124 and 126, are indicated in FIG. 5A. In oneembodiment, the narrower fin width 142 is about 4 nm, whereas theoriginal fin width 126 is targeted to be about 8 nm. The fin width canbe trimmed using, for example, an SC1 wet etching process that attacksthe silicon, or SiGe, fins laterally while the oxide film 140 protectsthe tops of the fins 122, as shown in FIG. 5B. The etchant will alsotrim the ends of the fins 122, farthest from the gate structure 128,causing the overall length of the fin to be slightly shorter. Under thegate structure 128, however, the fins 122 are protected by the oxide 124as well as the polysilicon gate 130 and the SiN cap 132, which are incontact with the sides and the tops of the fins, as shown in FIG. 5D.The oxide film 140 on top of the cap, shown in FIG. 5C, is not actuallyneeded, but neither is it detrimental.

One advantage of the narrower fin width 142 of the fin portions in thesource and drain regions is that narrower fins can be more easily doped.For example, when dopants are introduced into the thinner portions ofthe fins, the dopants are more uniformly distributed, which contributesto sharper source and drain junctions. Unfortunately, etching the fins122 tends to relax the strain. However, with the use of dual width fins122, the channel regions of the fins, i.e., the regions underneath thegate structure 128, remain un-etched, so the strain in the channelregions is not compromised. Hence, the mobility of charge carriers inthe channel regions remains enhanced, preserving the performance benefitof the strained channel devices.

At 110, the oxide film 140 is removed using a conventional pre-clean,e.g., a short hydrofluoric acid (HF) dip. A top portion of the BOX maybe removed in the pre-clean step, however, the BOX will be substantiallyunaffected because it is much thicker than the oxide film 140. After theoxide film 140 is removed, raised source and drain (RSD) regions 144 aregrown epitaxially from the side surfaces and top surfaces of the fins122 as shown in FIGS. 6A-6D, forming charge reservoirs having elongateddiamond-shaped profiles. The RSD regions 144 can be doped in-situ duringthe epitaxy process with arsenic (As) or phosphorous (P) for NFETdevices, or boron (B) for PFET devices. Exposure of the fins 122 to thedopant species also incorporates dopants into the fins, which distributeuniformly through the narrow fin width 142. During operation of theFinFET, the RSD regions 144 supply charge carriers to support currentflow within the channel portion of the fins 122. The RSD regions 144 areonly grown outside the gate structure 128 where the fins 122 areexposed. Hence, RSD regions 144 are not shown in cross-sectional view ofFIG. 6D.

At 112, the polysilicon gate 130 can be removed and replaced with ametal gate using a replacement metal gate (RMG) process that is wellknown in the art. In the RMG process, the polysilicon gate 130 isexposed to an etchant that consumes the polysilicon, selective to SiN,thus leaving the sidewall spacers substantially intact. The sidewallspacer structure is then filled with metal. The metal gate may includemultiple layers such as a work function metal e.g., titanium nitride(TiN) or titanium carbide (TiC), and a gate electrode typically made oftungsten (W).

Finally, contacts can be made to the completed dual width FinFET deviceusing, for example, a conventional damascene process that entailsdeposition of an inter-layer dielectric (ILD), etching contact holes inthe ILD, and filling the contact holes with metal.

It will be appreciated that, although specific embodiments of thepresent disclosure are described herein for purposes of illustration,various modifications may be made without departing from the spirit andscope of the present disclosure. Accordingly, the present disclosure isnot limited except as by the appended claims.

These and other changes can be made to the embodiments in light of theabove-detailed description. In general, in the following claims, theterms used should not be construed to limit the claims to the specificembodiments disclosed in the specification and the claims, but should beconstrued to include all possible embodiments along with the full scopeof equivalents to which such claims are entitled. Accordingly, theclaims are not limited by the disclosure.

The various embodiments described above can be combined to providefurther embodiments. All of the U.S. patents, U.S. patent applicationpublications, U.S. patent applications, foreign patents, foreign patentapplications and non-patent publications referred to in thisspecification and/or listed in the Application Data Sheet areincorporated herein by reference, in their entirety. Aspects of theembodiments can be modified, if necessary to employ concepts of thevarious patents, applications and publications to provide yet furtherembodiments.

1. A FinFET, comprising: a silicon substrate having an oxide layerburied therein; a raised epitaxial silicon source region overlying thesilicon substrate; a raised epitaxial silicon drain region overlying thesilicon substrate; a strained silicon fin having, as a first portion, achannel region that extends between the raised source and drain regions,the channel region having a first fin width, a second fin portion in thesource region, the second fin portion having a second fin width, and athird fin portion in the drain region, the third fin portion having athird fin width; and a metal gate structure that wraps around at leastthree sides of the strained silicon fin to control current flow in thechannel region.
 2. The FinFET of claim 1 wherein the third fin portionis substantially equal in width to the second fin portion and the secondfin portion is smaller than the channel region.
 3. The FinFET of claim 2wherein the channel region has a width in a range of 6-12 nm and thesecond portion has a width less than 5 nm.
 4. The FinFET of claim 1wherein in the raised source and drain regions, the strained silicon finhas an aspect ratio in a range of 5-10.
 5. The FinFET of claim 1 whereinthe strained silicon fin includes one or more of silicon (Si), silicongermanium (SiGe), or silicon carbide (SiC).
 6. The FinFET of claim 1wherein the strained silicon fin includes as dopants one or more ofarsenic (As), boron (B), and phosphorous (P).
 7. The FinFET of claim 1wherein the metal gate structure includes sidewall spacers made of oneor more of silicon nitride (SiN) or SiBCN. 8-13. (canceled)
 14. AFinFET, comprising: a raised source region; a raised drain region; a finextending from the raised source region to the raised drain region, thefin having a non-uniform fin width that varies along a length of thefin; and a gate that wraps around three sides of a channel region of thefin, the gate configured to control current flow within the channelregion, between the raised source region and the raised drain region.15. The FinFET of claim 14 wherein the channel region of the fin isapproximately twice as thick as portions of the fin outside the channelregion.
 16. The FinFET of claim 14 wherein the channel region of the finis a strained channel region.
 17. The FinFET of claim 14 whereinportions of the fin outside the channel region exhibit a substantiallyuniform distribution of dopants.
 18. The FinFET of claim 14 wherein theraised source and drain regions have diamond-shaped profiles.
 19. Adevice, comprising: a silicon substrate; a buried oxide layer in thesilicon substrate; a strained silicon fin above the buried oxide layer,the strained silicon fin including a wide portion having a first finwidth and a narrow portion having a second fin width; a top oxide layercovering the strained silicon fin; a gate structure adjacent to thestrained silicon fin, the gate structure including a metal gateelectrode and a gate oxide adjacent to the gate electrode; and epitaxialraised source and drain regions adjacent to the strained silicon fin.20. The device of claim 19 wherein the silicon substrate is a strainedsilicon-on-insulator substrate.
 21. The device of claim 19 wherein thewide portion of the strained silicon fin corresponds to a channel regionand the narrow portions of the strained silicon fin correspond to sourceand drain regions.
 22. The device of claim 19 wherein the wide portionand the narrow portions have substantially a same degree of strain. 23.The device of claim 19 wherein the wide portion is at least 20% widerthan the narrow portion.
 24. The device of claim 19 wherein theepitaxial raised source and drain regions have elongated diamond-shapedprofiles.